Zhanguo Wang, semiconductor materials physicist. Born in Zhenping, Henan Province on December 29, 1938. Graduated from the Physics Department of Nankai University in 1962. Researcher of Institute of Semiconductors, Chinese Academy of Sciences. Earlier, he devoted himself to the research on the photoelectric properties of semiconductor materials and the radiation effect of silicon solar cells. Since 1980, he has been mainly engaged in the research of semiconductor deep-level physics and spectroscopy physics, and proposed a new method to identify whether two deep-level coexisting systems are the same-defect and different energy states. The long-term dispute between the B energy level and the nature of the gold acceptor and gold donor energy levels in silicon. A physical model of deep energy level broadening and spectral line splitting in mixed crystal semiconductors is proposed to explain their physical causes. A five-level model of GaAs electrical compensation and a new criterion for electrical compensation are proposed. Assisting Mr. Lin Lanying to grow GaAs single product from melt in space for the first time and conduct systematic research on its photoelectric properties. In recent years, his experimental group has been straining self-assembly of quantum dots (wires) such as In(Ga)As/GaAs, In(Ga)As/InAlAs/InP. It has achieved breakthroughs in the growth of quantum dot (line) superlattice materials and the development of high-power quantum dot lasers. Recently, he put forward the concept of flexible substrates, opening up a new direction for the development of large mismatch material systems. He was elected as an academician of the Chinese Academy of Sciences in 1995.