Kefan Wang, Ph.D., Professor, published many papers in International Journals such as Applied Physics Letters, Solar Energy Materials and Solar Cells, Applied Surface Science, and has authorized 5 national invention patents, and won the 2007 "Shop of the American Vacuum Society (AVS)" Note Awards".
Resume:
In July 2001, he graduated from the College of Chemistry and Chemical Engineering, Jinan University, majoring in polymer materials science and engineering, and obtained a bachelor's degree in engineering;
In September 2006, he graduated from the University of Science and Technology of China, majoring in synchrotron radiation and applications, and obtained a doctorate degree in engineering. The research direction is ultra-high vacuum preparation of Ge/Si self-assembled quantum dots and synchrotron radiation structure characterization;
2006.9-2010.5, School of Physics and Electronics, Henan University, lecturer, associate professor appointed by the school;
2010.5-2017.12, Associate Professor, School of Physics and Electronics, Henan University;
2018.1-present, Professor, School of Physics and Electronics and Provincial Key Laboratory of Photovoltaic Materials, Henan University;
among them:
2009.10-2012.6 Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, major in materials science and engineering, post-doctorate, research direction is InAs/GaAs quantum dot intermediate band solar cells and black silicon solar cells;
2015.6-2017.6 Visiting Scholar and Research Fellow from the Department of Physics, The Chinese University of Hong Kong, whose research direction is the preparation of copper indium gallium selenium solar cells by co-evaporation.
Main research directions:
Black silicon materials and devices, silicon-based solar cells, synchrotron radiation and applications, first-principles material simulation.
Preside over important research projects:
National Natural Science Foundation of China Youth Fund (280,000): Research on black silicon infrared enhanced absorption mechanism based on synchrotron radiation, approval number 61204002.
China Postdoctoral Science Foundation (30,000): Research on the development of high-efficiency InAs/GaAs quantum dot intermediate zone solar cells and related mechanism research, approval number 20100470528.
Patent:
1. 碳化硅中间带太阳电池及其制备方法，公开号：CN104409553B.
2. 硫族元素超饱和掺杂硅红外探测器及其制备方法，公开号: CN103762255B.
3. 一种超饱和掺杂半导体薄膜的制备方法，公开号: CN103268852B.
4. 制备超饱和硫系元素掺杂硅的方法，公开号: CN102938435B.
5. 磷化镓铝应力补偿的砷化铟量子点太阳电池制作方法， 公开号: CN101908581B.
Representative papers and works:
1. Xiao Nairui, Tang Yehua, Qiu Yali, Liu Duoduo, Wang Ke-Fan*, One-step solution synthesis and stability study of inorganic perovskite semiconductor Cs2SnI6, Solar Energy, 204, 429-439(2020).
2. Li-Ying Zhang, Yong Zhang, Wei-Bao Guan, Ke-Fan Wang*, Zhen-Xiang Cheng*, and Yuan-Xu Wang*, Large enhanced conversion efficiency of perovskite solar cells by CsBr doping, J Mater Sci 52, 13203-13211(2017).
3. Ke-Fan Wang, Pingan Liu, Shengchun Qu, Yuanxu Wang, Zhanguo Wang, Optical and electrical properties of textured sulfur-hyperdoped silicon: a thermal annealing study, J Mater Sci, 50, 3391-3398(2015).
4. Ke-Fan Wang, Hezhu Shao, Kong Liu, Shengchun Qu, Yuanxu Wang, Zhanguo Wang, Possible atomic structures responsible for the sub-bandgap absorption of chalcogen-hyperdoped silicon, Appl. Phys. Lett. 107, 112106 (2015).
5. Ke-Fan Wang, Shengchun Qu, Dewei Liu, Kong Liu, Jian Wang, Li Zhao, Hongliang Zhu, Zhanguo Wang, Large enhancement of sub-band-gap light absorption of sulfur hyperdoped silicon by surface dome structures, Materials Letters, 2013, 107, 50-52.
6. Xiaoguang Yang, Kefan Wang, Yongxian Gu, Haiqiao Ni, Xiaodong Wang, Tao Yang, Zhanguo Wang, Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping, Solar Energy Materials & Solar Cells, 2013, 113, 144-147.
7. Ke-Fan Wang, Yongxian Gu, Xiaoguang Yang, Yang Tao, Si delta doping inside InAs/GaAs quantum dots with different doping densities, Journal of Vacuum Science & Technology B, 2012, 30, 041808-1-041808-6.
8. Ke-Fan Wang, Cheng-Xiao Peng, Wenhua Zhang, Weifeng Zhang, Sub-10-nm multifacet domelike Ge quantum dots grown on clean Si (001) (2×1) surface, Applied Physics A, 2011, 104, 573-578.
9. Wang Ke-Fan, Zhang Yang, Zhang Weifeng, Morphology and photoluminescence of ultrasmall size of Ge quantum dots directly grown on Si(0 0 1) substrate, Applied Surface Science, 2012, 258, 1935-1939.
10. Xilei Zhao, Ke-Fan Wang*, Weifeng Zhang, Mingju Huang, Yanli Mao, Growth research of Sn nanoparticles deposited on Si(0 0 1) substrate by solid phase epitaxy, Applied Surface Science, 2010, 256, 6427-6432.
11. K.F. Wang, Z.L. Shen, P.S. Xu, H.B. Pan, C.W. Zou, J.F. Liu, Simple designs to avoid high-voltage discharge in a silicon electron beam-heating cell，Journal of Vacuum Science and Technology A，2007, 25(3): 629-630.
12. K.F. Wang, J.F. Liu, C.X. Peng, P.S. Xu, S.Q. Wei, Deposition of high density of Ge quantum dots on ultra-thin SiO2 /Si(111) film surface, Physica E, 2007, 39(1): 89-94.
E-mail：
kfwang@henu.edu.cn, wang.kefan@gmail.com