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研究领域
 薄膜太阳能电池研究 
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  薄膜物理与器件研究
薄膜物理与器件研究

研究方向

方向一 半导体氧化物阻变器件研究

方向二 纳米发电机和压电光电子器件研究

方向三 近零膨胀器件研究

研究人员

张伟风 郑海务 孙献文 贾彩虹 田建军 张新安 李夕金 张传意 刘献省

研究成果

1. Avoiding the invasion of H2O into Y2Mo3O12 by coating with C3N4 to improve negative thermal expansion properties, Xiansheng Liu, Baohe Yuan, Yongguang Cheng, Xianghong Ge, Erjun Liang and Weifeng Zhang, Phys. Chem. Chem. Phys. 19(2017)1344-1348.

2. Ling Wei, C. H. Jia, W. F. Zhang*, Distinguish and control the multi-level resistive switching for ferroelectric layer and interface in a YMnO3/Nb:SrTiO3 device, RSC Adv. 6(2016) 445-1451.

3. Piezostrain-enhanced photovoltaic effects in BiFeO3/La0.7Sr0.3MnO3/PMN–PT heterostructures, Wei Zhang, Ming-Min Yang, Xiao Liang, Hai-Wu Zheng, Yu Wang, Wen-Xiu Gao, Guo-Liang Yuan, Wei-Feng Zhang, Xiao-Guang Lie, Hao-Su Luo, Ren-Kui Zheng, Nano Energy 18(2015)315-324.

4. Floquet exciton condensation in graphene bilayers, Chuanyi Zhang, Weifeng Zhang, and Guojun Jin, Phys. Rev. B 92(2015)085414.

5. Experimental observation and theoretical calculation of magnetic properties in Fe-doped cubic SiC nanowire, Haiwu Zheng, Yongjia Zhang, Yuli Yan, Zhicong Lv, Hao Yang, Xiangyang Liu, Yuzong Gu, Weifeng Zhang, Carbon 78(2014)288-297.

6. Origin of attendant phenomena of bipolar resistive switching and negative differential resistance in SrTiO3:Nb/ZnO heterojunctions, C. H. Jia, X. W. Sun, G. Q. Li,1 Y. H. Chen, W. F. Zhang, Appl. Phys. Lett. 104(2014)043501.

7. Negative differential resistance and resistance switching behaviors in BaTiO3 thin films, G. Yang, C. H. Jia, Y. H. Chen, X. Chen, W. F. Zhang, J. Appl. Phys. 115(2014)204515.

8. A separation mechanism of photogenerated charges and magnetic properties for BiFeO3 microspheres synthesized by a facile hydrothermal method, Haiwu Zheng, Xiangyang Liu, Chunli Diao, Yuzong Gua, Weifeng Zhang, Phys. Chem. Chem. Phys. 14(2012)8376-8381

9. Control of normal and abnormal bipolar resistive switching by interface junction on In/Nb:SrTiO3 interface, J. Sun, C.H. Jia, G.Q. Li, W.F. Zhang, Appl. Phys. Lett. 101(13)(2012)133506

10. Unipolar memristors enable “stateful” logic operations via material implication, Xianwen Sun, Guoqiang Li, Linghong Ding, Na Yang, Weifeng Zhang, Appl. Phys. Lett. 99(2011)072101.

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